Performance Evaluation of GAA Nanosheet FET with Varied Geometrical and Process Parameters

Nanosheet Field Effect Transistor (NSFET) is a viable contender for future scaling in sub-7-nm technology. This paper provides insights into the variations of DC FOMs different geometrical configurations NSFET. In this script, performance 3D GAA NSFET analyzed by varying device's width and thickness. Moreover, gate length scaled from 20 nm to 5 check device suitability continuous logic applications. The thickness each nanosheet are varied range 9 10 50 nm, respectively, analyze dependency on geometry device. impact various metrics like transfer characteristics, sub-threshold swing (SS), current (ION), off (IOFF), switching ratio (ION/IOFF), threshold voltage (Vth), drain induced barrier lowering (DIBL) studied. On top that, electrical characteristics wide temperatures -43oC 127oC identify temperature compensation point observed at VGS = 0.55 V ID 3.86 × 10-6 A. Furthermore, vital process parameter, work function analyzed. analyses reveal sub -7 potential high suitable